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    Plasma processing apparatus
    1.
    发明授权
    Plasma processing apparatus 有权

    公开(公告)号：US10192720B2

    公开(公告)日：2019-01-29

    申请号：US15210257

    申请日：2016-07-14

    申请人： Hitachi High-Technologies Corporation

    发明人： Hiroyuki Kobayashi ,  Nobuya Miyoshi ,  Kazunori Shinoda ,  Kenji Maeda ,  Satoshi Sakai ,  Masaru Izawa

    IPC分类号： H01J37/32 ,  H01L21/67

    摘要： A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.

    ETCHING APPARATUS
    3.
    发明申请
    ETCHING APPARATUS 审中-公开
    蚀刻装置

    公开(公告)号：US20150270148A1

    公开(公告)日：2015-09-24

    申请号：US14627002

    申请日：2015-02-20

    申请人： Hitachi High-Technologies Corporation

    发明人： Kazunori Shinoda ,  Tsutomu Tetsuka ,  Kenji Maeda

    IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L21/268 ,  H01J37/32

    CPC分类号： H01L21/268 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32724 ,  H01J37/32853 ,  H01J37/32862 ,  H01J2237/334 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/67115

    摘要： An etching apparatus including a processing chamber, a supply unit for reactive species, and a lamp for vacuum-ultraviolet light irradiation is prepared. In the etching apparatus, etching can be performed by repeating a first step of adsorbing the reactive species to a surface of a wafer to form byproducts, a second step of irradiating the surface of the wafer with vacuum-ultraviolet light from the lamp for vacuum-ultraviolet light irradiation, to desorb the byproducts, and a third step of exhausting the desorbed byproducts.

    摘要翻译： 制备包括处理室，反应物种供给单元和真空紫外线照射灯的蚀刻装置。 在蚀刻装置中，可以通过重复将反应性物质吸附到晶片的表面以形成副产物的第一步骤进行蚀刻;第二步骤，用来自灯的真空紫外线照射晶片的表面， 紫外线照射，以解除副产物，以及排出解吸附的副产物的第三步骤。

    Plasma processing apparatus and operation method thereof
    5.
    发明授权
    Plasma processing apparatus and operation method thereof 有权

    公开(公告)号：US10008370B2

    公开(公告)日：2018-06-26

    申请号：US14973592

    申请日：2015-12-17

    申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION

    发明人： Takeshi Ohmori ,  Daisuke Satou ,  Tatehito Usui ,  Satomi Inoue ,  Kenji Maeda

    IPC分类号： C23C16/513 ,  H01J37/32

    CPC分类号： H01J37/32917 ,  H01J37/32926 ,  H01J37/32972 ,  H01J37/3299

    摘要： A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

    Plasma processing apparatus and plasma processing method
    6.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08951385B2

    公开(公告)日：2015-02-10

    申请号：US13864317

    申请日：2013-04-17

    申请人： Hitachi High-Technologies Corporation

    发明人： Kenji Maeda ,  Ken Yoshioka ,  Hiromichi Kawasaki ,  Takahiro Shimomura

    IPC分类号： H01L21/306 ,  H01L21/67 ,  H01L21/02 ,  C23C16/507 ,  H01J37/32

    CPC分类号： H01J37/3211 ,  C23C16/45557 ,  C23C16/505 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32155 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32816 ,  H01L21/02 ,  H01L21/02041 ,  H01L21/02104 ,  H01L21/30 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67069

    摘要： A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

    摘要翻译： 提供了一种等离子体处理装置，其具有可抽真空的真空容器，处理室设置在真空容器的内部，并且具有内部空间，其中产生用于处理待处理样品的等离子体，其中放置样品，用于将等离子体产生的气体供应到 处理室，用于在处理室内抽真空的真空抽气单元，设置在真空容器外部的螺旋谐振线圈构成的螺旋谐振器和设置在线圈外部的电接地屏蔽，RF频率可变频率供给给定范围内的RF电力 谐振线圈和频率匹配装置，其能够调整RF电源的频率，以便使反射的RF功率最小化。 谐振线圈具有设定为给定频率的一个波长的整数倍的电长度。 螺旋谐振线圈使用可变电容器件将馈电点连接到地电位。