Invention Grant
- Patent Title: Non-volatile memory devices and methods of fabricating the same
- Patent Title (中): 非易失性存储器件及其制造方法
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Application No.: US14293346Application Date: 2014-06-02
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Publication No.: US09378977B2Publication Date: 2016-06-28
- Inventor: Minchul Kim , Jae-Hwang Sim , Sangbin Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Onello & Mello LLP
- Priority: KR10-2010-0127155 20101213
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/3213 ; H01L27/115 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L29/792
Abstract:
A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.
Public/Granted literature
- US20140273495A1 NON-VOLATILE MEMORY DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2014-09-18
Information query
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