公开(公告)号：US20140273495A1

公开(公告)日：2014-09-18

申请号：US14293346

申请日：2014-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul Kim ,  Jae-Hwang Sim ,  Sangbin Song

IPC: H01L21/3213 ,  H01L29/66

CPC classification number: H01L21/32135 ,  H01L27/11524 ,  H01L27/11543 ,  H01L27/1157 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.

Abstract translation: 非易失性存储器件包括衬底，衬底上的控制栅极电极和控制栅电极与衬底之间的电荷存储区域。 控制栅极掩模图案位于控制栅电极上，控制栅极电极包括控制基极栅极和控制基极栅极上的控制金属栅极。 控制金属栅极的宽度小于控制栅极掩模图案的宽度。 位于控制栅掩模图案和控制基栅之间的控制金属栅极的侧壁处具有抗氧化间隔物。

公开(公告)号：US09378977B2

公开(公告)日：2016-06-28

申请号：US14293346

申请日：2014-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minchul Kim ,  Jae-Hwang Sim ,  Sangbin Song

IPC: H01L21/336 ,  H01L21/3213 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788 ,  H01L29/792

CPC classification number: H01L21/32135 ,  H01L27/11524 ,  H01L27/11543 ,  H01L27/1157 ,  H01L29/42324 ,  H01L29/42332 ,  H01L29/4234 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881 ,  H01L29/792

Abstract: A non-volatile memory device comprises a substrate, a control gate electrode on the substrate, and a charge storage region between the control gate electrode and the substrate. A control gate mask pattern is on the control gate electrode, the control gate electrode comprising a control base gate and a control metal gate on the control base gate. A width of the control metal gate is less than a width of the control gate mask pattern. An oxidation-resistant spacer is at sidewalls of the control metal gate positioned between the control gate mask pattern and the control base gate.

Abstract translation: 非易失性存储器件包括衬底，衬底上的控制栅极电极和控制栅电极与衬底之间的电荷存储区域。 控制栅极掩模图案位于控制栅电极上，控制栅极电极包括控制基极栅极和控制基极栅极上的控制金属栅极。 控制金属栅极的宽度小于控制栅极掩模图案的宽度。 位于控制栅掩模图案和控制基栅之间的控制金属栅极的侧壁处具有抗氧化间隔物。