Invention Grant
- Patent Title: Method of thinning a wafer to provide a raised peripheral edge
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Application No.: US14806993Application Date: 2015-07-23
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Publication No.: US09378985B2Publication Date: 2016-06-28
- Inventor: Belgacem Haba , Ilyas Mohammed
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L21/56
- IPC: H01L21/56 ; H01L21/50 ; H01L23/00 ; H01L21/3105 ; H01L21/304 ; H01L21/78 ; H01L23/31 ; H01L25/065 ; H01L25/00
Abstract:
A first area of a first surface of an encapsulated component can be thinned, the component including: a semiconductor chip having an active surface opposite the first surface, and an encapsulant extending outwardly from edges of the semiconductor chip. An entire area of the active surface may be aligned with the first area. After the abrading, a second area of the encapsulated component beyond the first area may have a thickness greater than a thickness of the first area. The second area can be configured to fully support the abraded encapsulated component in a state of the encapsulated component being manipulated by handling equipment.
Public/Granted literature
- US20150325562A1 METHOD OF THINNING A WAFER TO PROVIDE A RAISED PERIPHERAL EDGE Public/Granted day:2015-11-12
Information query
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