Invention Grant
- Patent Title: Metal PVD-free conducting structures
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Application No.: US14627252Application Date: 2015-02-20
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Publication No.: US09379008B2Publication Date: 2016-06-28
- Inventor: Cyprian Emeka Uzoh , Charles G. Woychik , Michael Newman , Pezhman Monadgemi , Terrence Caskey
- Applicant: Invensas Corporation
- Applicant Address: US CA San Jose
- Assignee: Invensas Corporation
- Current Assignee: Invensas Corporation
- Current Assignee Address: US CA San Jose
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L23/498 ; H01L23/532 ; H01L21/3205 ; H01L23/14 ; H01L23/525
Abstract:
Structures and methods of forming the same are disclosed herein. In one embodiment, a structure can comprise a region having first and second oppositely facing surfaces. A barrier region can overlie the region. An alloy region can overlie the barrier region. The alloy region can include a first metal and one or more elements selected from the group consisting of silicon (Si), germanium (Ge), indium (Id), boron (B), arsenic (As), antimony (Sb), tellurium (Te), or cadmium (Cd).
Public/Granted literature
- US20150162241A1 METAL PVD-FREE CONDUCTING STRUCTURES Public/Granted day:2015-06-11
Information query
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