A replacement gate structure that includes a conductive metal gate electrode is formed in a gate cavity, wherein the gate cavity is formed in a dielectric material formed above an active region of a semiconductor device. An upper surface of the conductive metal gate electrode and an upper surface of the dielectric material are planarized during a common planarization process, and a protective conductive cap is selectively formed on and in direct physical contact with the planarized upper surface of the conductive metal gate electrode. A contact structure is formed in a dielectric insulating layer formed above the replacement gate structure, the contact structure directly contacting the protective conductive cap.