发明授权
US09379259B2 Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
有权
双层透明导电氧化物，用于降低光伏器件中的肖特基势垒
- 专利标题： Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices
- 专利标题（中）： 双层透明导电氧化物，用于降低光伏器件中的肖特基势垒
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申请号： US13668941申请日： 2012-11-05
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公开(公告)号： US09379259B2公开(公告)日： 2016-06-28
- 发明人: Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , Bay Zu Precision Co., LTD.
- 申请人地址： US NY Armonk TW Tainan
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD.
- 当前专利权人地址： US NY Armonk TW Tainan
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/075
- IPC分类号： H01L31/075 ; H01L31/0224 ; H01L31/0392 ; H01L31/18
摘要：
A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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