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1.发明申请公开(公告)号：US20180175225A1
公开(公告)日：2018-06-21
申请号：US15894690
申请日：2018-02-12
Inventor： SHUN-MING CHEN , CHIEN-CHIH HUANG , JOEL P. DESOUZA , AUGUSTIN J. HONG , JEEHWAN KIM , CHIEN-YEH KU , DEVENDRA K. SADANA , CHUAN-WEN WANG
IPC: H01L31/0224 , H01L31/075 , H01L31/18 , H01L31/0392
CPC classification number: H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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2.发明授权公开(公告)号：US10593815B2
公开(公告)日：2020-03-17
申请号：US15894690
申请日：2018-02-12
Inventor： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC: H01L31/0224 , H01L31/0392 , H01L31/075 , H01L31/18
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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3.发明申请DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES 有权双层双层透明导电氧化物，用于减少光伏器件中的肖特基屏障公开(公告)号：US20160300965A1
公开(公告)日：2016-10-13
申请号：US15189925
申请日：2016-06-22
Inventor： SHUN-MING CHEN , CHIEN-CHIH HUANG , JOEL P. DESOUZA , AUGUSTIN J. HONG , JEEHWAN KIM , CHIEN-YEH KU , DEVENDRA K. SADANA , CHUAN-WEN WANG
IPC: H01L31/0224 , H01L31/18 , H01L31/0392 , H01L31/075
CPC classification number: H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
Abstract translation: 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。
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4.发明申请公开(公告)号：US20200152809A1
公开(公告)日：2020-05-14
申请号：US16741142
申请日：2020-01-13
Inventor： SHUN-MING CHEN , CHIEN-CHIH HUANG , JOEL P. DESOUZA , AUGUSTIN J. HONG , JEEHWAN KIM , CHIEN-YEH KU , DEVENDRA K. SADANA , CHUAN-WEN WANG
IPC: H01L31/0224 , H01L31/18 , H01L31/075 , H01L31/0392
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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5.发明授权公开(公告)号：US09537038B2
公开(公告)日：2017-01-03
申请号：US14941023
申请日：2015-11-13
Inventor： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC: H01L31/075 , H01L31/18 , H01L31/20 , H01L31/0224
CPC classification number: H01L31/075 , H01L31/022466 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
Abstract translation: 一种用于形成光伏器件的方法包括在衬底上沉积p型层。 通过将p型层暴露于氧化剂，在p型层上形成阻挡层。 在势垒层上形成本征层，在本征层上形成n型层。
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Patent Agency Ranking
6.发明授权Double layered transparent conductive oxide for reduced schottky barrier in photovoltaic devices 有权双层透明导电氧化物，用于降低光伏器件中的肖特基势垒公开(公告)号：US09379259B2
公开(公告)日：2016-06-28
申请号：US13668941
申请日：2012-11-05
Inventor： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC: H01L31/075 , H01L31/0224 , H01L31/0392 , H01L31/18
CPC classification number: H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
Abstract translation: 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。
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7.发明授权公开(公告)号：US11444215B2
公开(公告)日：2022-09-13
申请号：US16741142
申请日：2020-01-13
Inventor： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC: H01L31/0224 , H01L31/0392 , H01L31/075 , H01L31/18
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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8.发明授权公开(公告)号：US09917215B2
公开(公告)日：2018-03-13
申请号：US15189925
申请日：2016-06-22
Inventor： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC: H01L31/075 , H01L31/0224 , H01L31/0392 , H01L31/18
CPC classification number: H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
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公开(公告)号：US20160071995A1
公开(公告)日：2016-03-10
申请号：US14941023
申请日：2015-11-13
Inventor： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC: H01L31/075 , H01L31/0224 , H01L31/18
CPC classification number: H01L31/075 , H01L31/022466 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
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10.发明申请DOUBLE LAYERED TRANSPARENT CONDUCTIVE OXIDE FOR REDUCED SCHOTTKY BARRIER IN PHOTOVOLTAIC DEVICES 有权双层双层透明导电氧化物，用于减少光伏器件中的肖特基屏障公开(公告)号：US20140127853A1
公开(公告)日：2014-05-08
申请号：US13668941
申请日：2012-11-05
Inventor： Shun-Ming Chen , Chien-Chih Huang , Joel P. Desouza , Augustin J. Hong , Jeehwan Kim , Chien-Yeh Ku , Devendra K. Sadana , Chuan-Wen Wang
IPC: H01L31/18
CPC classification number: H01L31/022483 , H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1884 , Y02E10/548
Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
Abstract translation: 一种用于制造光伏器件的器件和方法包括在透明衬底上形成双层透明导电氧化物。 双层透明导电氧化物包括在衬底上形成掺杂电极层，并在掺杂电极层上形成缓冲层。 缓冲层包括与掺杂电极层相同材料的未掺杂或p型掺杂本征形式。 光吸收半导体结构包括缓冲层上的p型半导体层，本征层和n型半导体层。
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