Invention Grant
US09379314B2 Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)
有权
用于垂直磁隧道结的混合合成反铁磁层（MTJ）
- Patent Title: Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ)
- Patent Title (中): 用于垂直磁隧道结的混合合成反铁磁层（MTJ）
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Application No.: US14109234Application Date: 2013-12-17
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Publication No.: US09379314B2Publication Date: 2016-06-28
- Inventor: Chando Park , Kangho Lee , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Seyfarth Shaw LLP
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/10 ; H01L43/12 ; H01L43/08 ; G11C11/16
Abstract:
A magnetic tunnel junction (MTJ) device includes a free layer. The MTJ also includes a barrier layer coupled to the free layer. The MTJ also has a fixed layer, coupled to the barrier layer. The fixed layer includes a first synthetic antiferromagnetic (SAF) multilayer having a first perpendicular magnetic anisotropy (PMA) and a first damping constant. The fixed layer also includes a second SAF multilayer having a second perpendicular magnetic anisotropy (PMA) and a second damping constant lower than the first damping constant. The first SAF multilayer is closer to the barrier layer than the second SAF multilayer. The fixed layer also includes a SAF coupling layer between the first and the second SAF multilayers.
Public/Granted literature
- US20150171316A1 HYBRID SYNTHETIC ANTIFERROMAGNETIC LAYER FOR PERPENDICULAR MAGNETIC TUNNEL JUNCTION (MTJ) Public/Granted day:2015-06-18
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