Invention Grant
- Patent Title: Chemical vapor deposition raw material comprising organoplatinum compound, and chemical vapor deposition method using the chemical vapor deposition raw material
- Patent Title (中): 包含有机铂化合物的化学气相沉积原料和使用化学气相沉积原料的化学气相沉积法
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Application No.: US14344603Application Date: 2012-10-12
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Publication No.: US09382616B2Publication Date: 2016-07-05
- Inventor: Masayuki Saito , Kazuharu Suzuki , Toshiyuki Shigetomi , Shunichi Nabeya
- Applicant: TANAKA KIKINZOKU KOGYO K.K.
- Applicant Address: JP Tokyo
- Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee: TANAKA KIKINZOKU KOGYO K.K.
- Current Assignee Address: JP Tokyo
- Agency: Roberts & Roberts, LLP
- Priority: JPP2011-226568 20111014
- International Application: PCT/JP2012/076387 WO 20121012
- International Announcement: WO2013/054863 WO 20130418
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/18 ; C07F15/00 ; C23C16/448 ; C23C16/46

Abstract:
A chemical vapor deposition raw material for producing a platinum thin film or a platinum compound thin film by a chemical vapor deposition method, wherein the chemical vapor deposition raw material includes an organoplatinum compound having cyclooctadiene and alkyl anions coordinated to divalent platinum, and the organoplatinum compound is represented by the following formula. Here, one in which R1 and R2 are any combination of propyl and methyl, propyl and ethyl, or ethyl and methyl is particularly preferred. wherein R1 and R2 are alkyl groups, and R1 and R2 are different; and a number of carbon atoms of R1 and R2 is 3 to 5 in total.
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