公开(公告)号：US10077282B2

公开(公告)日：2018-09-18

申请号：US15558262

申请日：2016-05-09

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Kazuharu Suzuki ,  Shunichi Nabeya ,  Akiko Kumakura ,  Tatsutaka Aoyama ,  Takayuki Sone

IPC: H01L21/31 ,  C07F15/00 ,  C23C16/18 ,  H01L21/285 ,  C09D5/24

CPC classification number: C07F15/0086 ,  C07F15/00 ,  C09D5/24 ,  C23C16/18 ,  H01L21/285 ,  H01L21/28568 ,  H01L21/31

Abstract: The present invention relates to a raw material for chemical deposition shown in a formulae below and including an organoplatinum compound in which diimine containing two imines and an alkyl anion are coordinated to divalent platinum. In the formulae, each of substituents R1 to R4 on the diimine represents a hydrogen atom, an alkyl group or the like and has a carbon number of 5 or less. Each of alkyl anions R5 and R6 is an alkyl group having a carbon number of 1 or more and 3 or less. The raw material has high vapor pressure and low decomposition temperature, and thus it is possible to manufacture a platinum thin film at low temperature.

公开(公告)号：US09447495B2

公开(公告)日：2016-09-20

申请号：US14890485

申请日：2013-12-27

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Kazuharu Suzuki ,  Masayuki Saito ,  Ryosuke Harada ,  Shunichi Nabeya ,  Satoshi Miyazaki

IPC: C23C16/18 ,  C07F15/00 ,  C07F15/04

CPC classification number: C23C16/18 ,  C07F15/04

Abstract: The present invention provides a chemical vapor deposition raw material, which has a low melting point, has heat stability such that no thermal decomposition occurs during vaporization, readily decomposes at low temperature during film-formation, and can stably form a nickel thin-film having fewer impurities. The present invention relates to a chemical vapor deposition raw material containing an organic nickel compound, in which a cyclopentadienyl group or a derivative thereof is coordinated to nickel, and a cycloalkenyl group having one allyl group or a derivative thereof is coordinated to the carbon skeleton of cycloalkyl. This raw material has a low melting point, proper heat stability and film-formation ability at low temperature. Further, due to a high vapor pressure, the raw material is suitable for a three-dimensional electrode material having a three-dimensional structure.

Abstract translation: 本发明提供一种化学气相沉积原料，其熔点低，具有热稳定性，使得在蒸发时不会发生热分解，在成膜期间在低温下容易分解，并且可以稳定地形成具有 杂质少。 本发明涉及一种含有有机镍化合物的化学气相沉积原料，其中环戊二烯基或其衍生物与镍配位，并且具有一个烯丙基或其衍生物的环烯基与碳骨架配位 环烷基。 该原料在低温下具有低熔点，适当的热稳定性和成膜能力。 此外，由于高蒸气压，原料适用于具有三维结构的三维电极材料。

公开(公告)号：US09382616B2

公开(公告)日：2016-07-05

申请号：US14344603

申请日：2012-10-12

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Masayuki Saito ,  Kazuharu Suzuki ,  Toshiyuki Shigetomi ,  Shunichi Nabeya

IPC: C23C16/00 ,  C23C16/18 ,  C07F15/00 ,  C23C16/448 ,  C23C16/46

CPC classification number: C23C16/18 ,  C07F15/0086 ,  C23C16/4485 ,  C23C16/46

Abstract: A chemical vapor deposition raw material for producing a platinum thin film or a platinum compound thin film by a chemical vapor deposition method, wherein the chemical vapor deposition raw material includes an organoplatinum compound having cyclooctadiene and alkyl anions coordinated to divalent platinum, and the organoplatinum compound is represented by the following formula. Here, one in which R1 and R2 are any combination of propyl and methyl, propyl and ethyl, or ethyl and methyl is particularly preferred. wherein R1 and R2 are alkyl groups, and R1 and R2 are different; and a number of carbon atoms of R1 and R2 is 3 to 5 in total.

Abstract translation: 一种用于通过化学气相沉积法生产铂薄膜或铂化合物薄膜的化学气相沉积原料，其中化学气相沉积原料包括具有环辛二烯的有机铂化合物和与二价铂配位的烷基阴离子，以及有机铂化合物 由下式表示。 这里，特别优选其中R 1和R 2是丙基和甲基，丙基和乙基之间的任何组合，或乙基和甲基的化合物。 其中R1和R2是烷基，R1和R2不同; 并且R1和R2的多个碳原子总共为3〜5。

公开(公告)号：US10526698B2

公开(公告)日：2020-01-07

申请号：US16277789

申请日：2019-02-15

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Shunichi Nabeya ,  Kazuharu Suzuki ,  Akiko Kumakura ,  Tatsutaka Aoyama ,  Takayuki Sone

IPC: C23C16/18 ,  C07F13/00 ,  C07F15/00 ,  C07F15/02 ,  C07F15/06 ,  C07F17/00 ,  C07F19/00 ,  C23C16/06 ,  C07F15/04

Abstract: The present invention relates to a chemical deposition raw material including a heterogeneous polynuclear complex in which a cyclopentadienyl and a carbonyl are coordinated to a first transition metal and a second transition metal as central metals, the chemical deposition raw material being represented by the following formula. In the following formula, the first transition metal (M1) and the second transition metal (M2) are mutually different. The number of cyclopentadienyls (L) is 1 or more and 2 or less, and to the cyclopentadienyl is coordinated one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less as each of substituents R1 to R5. With the chemical deposition raw material of the present invention, a composite metal thin film or a composite metal compound thin film containing plural metals can be formed from a single raw material.

公开(公告)号：US10407450B2

公开(公告)日：2019-09-10

申请号：US15558011

申请日：2016-05-09

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Shunichi Nabeya ,  Kazuharu Suzuki ,  Akiko Kumakura ,  Tatsutaka Aoyama ,  Takayuki Sone

IPC: C07F13/00 ,  C07F15/00 ,  C23C16/16 ,  C07F15/06 ,  C07F19/00 ,  C07C251/08 ,  C23C16/18 ,  H01L21/285 ,  H01L21/31 ,  C23C16/06 ,  C23C16/46 ,  H01L21/02

Abstract: A heterogeneous polynuclear complex for use as a raw material in the chemical deposition of composite metal or composite metal thin films with the below formula. In the formula, M1 and M2 are mutually different transition metals, x is an integer of 0 or more and 2 or less, y is in integer of 1 or more and 2 or less, z is an integer of 1 or more and 10 or less, R1 to R4 are each one of a hydrogen atom and an alkyl group with a carbon number of 1 or more and 5 or less, and R5 is a hydrogen atom, a carbonyl, an alkyl group with a carbon number of 1 or more and 7 or less, an allyl group or an allyl derivative. The heterogeneous polynuclear complex allows a composite metal thin film or a composite metal compound thin film containing a plurality of metals to be formed from a single raw material.

公开(公告)号：US09805936B2

公开(公告)日：2017-10-31

申请号：US15025345

申请日：2014-09-18

Applicant: Tanaka Kikinzoku Kogyo K.K.

Inventor： Shunichi Nabeya ,  Ryosuke Harada ,  Kazuharu Suzuki ,  Takayuki Sone ,  Michihiro Yokoo

IPC: H01L21/285 ,  C23C16/18 ,  C23C16/56 ,  C23C16/02 ,  C23C16/46 ,  C23C16/42 ,  H01L29/45

CPC classification number: H01L21/28518 ,  C23C16/0272 ,  C23C16/18 ,  C23C16/42 ,  C23C16/46 ,  C23C16/56 ,  H01L21/28556 ,  H01L29/456

Abstract: A method for producing a nickel thin film on a Si substrate by a chemical vapor deposition method, in which the nickel thin film is formed by use of a hydrocarbon-type nickel complex represented by a following formula as a raw material compound, which is a nickel complex in which a cyclopentadienyl group (Cp) or a derivative thereof and a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof are coordinated to nickel and an element other than carbon and hydrogen is not contained in the structure, use of hydrogen as a reaction gas, and use of a film formation pressure of 1 to 150 torr and a film formation temperature of 80 to 250° C. as film formation conditions (In the formula, X represents a chain or cyclic alkenyl group having 3 to 9 carbon atoms or a derivative thereof. R1 to R5 which are substituent groups of the cyclopentadienyl group represent CnH2n+1 and n represents an integer of 0 to 6).

公开(公告)号：US09108997B2

公开(公告)日：2015-08-18

申请号：US14396861

申请日：2013-06-06

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Ryosuke Harada ,  Shunichi Nabeya ,  Toshiyuki Shigetomi ,  Masayuki Saito

IPC: C07F17/02 ,  C07F15/00 ,  B01J23/44 ,  C07C45/79 ,  C07C45/85 ,  B01J23/42 ,  B01J23/46 ,  B01J25/02

CPC classification number: C07F15/0046 ,  B01J23/42 ,  B01J23/44 ,  B01J23/462 ,  B01J25/02 ,  C07C45/79 ,  C07C45/85 ,  C07C49/92

Abstract: The present invention is a method for recycling an organic ruthenium compound for chemical vapor deposition, wherein an unreacted organic ruthenium compound is extracted from a used raw material through a thin film formation process. The method includes the following steps (a) to (c). (a) A modification step in which the used raw material and a hydrogenation catalyst are brought into contact with each other in a hydrogen atmosphere, thereby hydrogenating an oxidized organic ruthenium compound in the used raw material. (b) An adsorption step in which the used raw material and an adsorbent are brought into contact with each other, thereby removing impurities in the used raw material. (c) A restoration step in which the used raw material is heated at a temperature that is not lower than −100° C. and not higher than −10° C. with respect to the decomposition temperature of the organic ruthenium compound for eight hours or more, thereby adjusting the ratio of the isomers of the organic ruthenium compound in the used raw material.

Abstract translation: 本发明是一种用于化学气相沉积的有机钌化合物的再循环方法，其中通过薄膜形成方法从使用的原料中提取未反应的有机钌化合物。 该方法包括以下步骤（a）至（c）。 （a）在氢气氛中使使用的原料和氢化催化剂彼此接触的改性步骤，从而使所使用的原料中的氧化的有机钌化合物氢化。 （b）使原料和吸附剂相互接触的吸附工序，除去原料中的杂质。 （c）将有机钌化合物的分解温度在不低于-100℃且不高于-10℃的温度下加热8小时的恢复步骤 以上，由此调整所使用的原料中的有机钌化合物的异构体的比例。

公开(公告)号：US20250059642A1

公开(公告)日：2025-02-20

申请号：US18938069

申请日：2024-11-05

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Kazuharu SUZUKI ,  Yuki Mori ,  Subhabrata Das ,  Hirofumi Nakagawa ,  Shunichi Nabeya

IPC: C23C16/18 ,  C07C49/12 ,  C07F15/00 ,  C23C16/448

Abstract: The present invention is drawn to a raw material for chemical deposition for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, containing an organoruthenium compound represented by the following formula 1, and further containing β-diketone that is the same as a ligand of the organoruthenium compound. The raw material for chemical deposition of the present invention is inhibited in discoloration/precipitation even when heated at a high temperature, and enables to form a stable ruthenium thin film or ruthenium compound thin film. wherein substituents R1 and R2 are each hydrogen, or a linear or branched alkyl group.

公开(公告)号：US10465283B2

公开(公告)日：2019-11-05

申请号：US15558057

申请日：2016-05-09

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Kazuharu Suzuki ,  Shunichi Nabeya ,  Akiko Kumakura ,  Rumi Kobayashi ,  Takayuki Sone

IPC: C07F15/00 ,  C23C16/18 ,  C07C211/21 ,  H01L21/285 ,  C23C16/46 ,  H01L49/02

Abstract: An organoplatinum compound with the following formula for use as a raw material in the chemical deposition of platinum compound thin films. In the formula, n is 1 or more and 5 or less. Each of substituents R1 to R5 on the alkenyl amine is a hydrogen atom, an alkyl group or the like and has a carbon number of 4 or less. Each of alkyl anions R6 and R7 is an alkyl group having a carbon number of 1 or more and 3 or less. The vapor pressure of the organoplatinum compound is high enough to allow for the manufacturing of a platinum thin film at low temperature. It also has moderate thermal stability.

公开(公告)号：US10131987B2

公开(公告)日：2018-11-20

申请号：US15514778

申请日：2015-09-24

Applicant: TANAKA KIKINZOKU KOGYO K.K.

Inventor： Ryosuke Harada ,  Toshiyuki Shigetomi ,  Kazuharu Suzuki ,  Shunichi Nabeya ,  Takayuki Sone ,  Akiko Kumakura

IPC: C23C16/18 ,  C07F15/00 ,  H01L21/28 ,  H01L21/285 ,  C07F17/02 ,  C09D1/00

Abstract: The invention provides a raw material for chemical deposition having properties required for a CVD compound, that is, which has a high vapor pressure, can be formed into a film at low temperatures (about 250° C. or less), and also has moderate thermal stability. The invention relates to a raw material for chemical deposition, for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, the raw material for chemical deposition including an organoruthenium compound represented by the following formula, in which a cyclohexadienyl group or a derivative thereof and a pentadienyl group or a derivative thereof are coordinated to ruthenium: wherein the substituents R1 to R12 are each independently a hydrogen atom, a linear or cyclic hydrocarbon, an amine, an imine, an ether, a ketone, or an ester, and the substituents R1 to R12 each have 6 or less carbon atoms.