Invention Grant
US09383418B2 Integrated dual axis fluxgate sensor using double deposition of magnetic material
有权
集成双轴磁通门传感器采用双重沉积磁性材料
- Patent Title: Integrated dual axis fluxgate sensor using double deposition of magnetic material
- Patent Title (中): 集成双轴磁通门传感器采用双重沉积磁性材料
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Application No.: US14286517Application Date: 2014-05-23
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Publication No.: US09383418B2Publication Date: 2016-07-05
- Inventor: Anuraag Mohan , Dok Won Lee , William French , Erika L. Mazotti
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L29/26
- IPC: H01L29/26 ; G01R33/09 ; H01L43/00 ; H01L43/12 ; G01R33/04
Abstract:
A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
Public/Granted literature
- US20150338474A1 INTEGRATED DUAL AXIS FLUXGATE SENSOR USING DOUBLE DEPOSITION OF MAGNETIC MATERIAL Public/Granted day:2015-11-26
Information query
IPC分类:
