Invention Grant
US09384960B2 Method of manufacturing a semiconductor device with a continuous silicate glass structure
有权
制造具有连续硅酸盐玻璃结构的半导体器件的方法
- Patent Title: Method of manufacturing a semiconductor device with a continuous silicate glass structure
- Patent Title (中): 制造具有连续硅酸盐玻璃结构的半导体器件的方法
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Application No.: US14824339Application Date: 2015-08-12
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Publication No.: US09384960B2Publication Date: 2016-07-05
- Inventor: Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/02 ; H01L21/3115 ; H01L23/29 ; H01L23/31 ; H01L29/10 ; H01L29/78 ; H01L29/49 ; H01L29/66 ; H01L29/739 ; H01L29/06 ; H01L29/423 ; H01L29/40
Abstract:
A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
Public/Granted literature
- US20150348776A1 Method of Manufacturing a Semiconductor Device with a Continuous Silicate Glass Structure Public/Granted day:2015-12-03
Information query
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