Invention Grant
- Patent Title: Polycrystallization method
- Patent Title (中): 多结晶方法
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Application No.: US14540458Application Date: 2014-11-13
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Publication No.: US09384965B2Publication Date: 2016-07-05
- Inventor: Naoya Ito , Toshihide Jinnai , Hirofumi Mizukoshi
- Applicant: Japan Display Inc.
- Applicant Address: JP Minato-ku
- Assignee: Japan Display Inc.
- Current Assignee: Japan Display Inc.
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2013-239048 20131119
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/02 ; H01L27/12
Abstract:
According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface. The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left.
Public/Granted literature
- US20150140794A1 POLYCRYSTALLIZATION METHOD Public/Granted day:2015-05-21
Information query
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