公开(公告)号：US09384965B2

公开(公告)日：2016-07-05

申请号：US14540458

申请日：2014-11-13

Applicant: Japan Display Inc.

Inventor： Naoya Ito ,  Toshihide Jinnai ,  Hirofumi Mizukoshi

IPC: H01L21/20 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L21/02238 ,  H01L21/02052 ,  H01L21/02323 ,  H01L21/02343 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1274

Abstract: According to one embodiment, provided is a polycrystallization method for polycrystallizing an amorphous semiconductor film that has a natural oxide film on the surface. The polycrystallization method includes a step of cleaning the natural oxide film while leaving the natural oxide film on the surface of the amorphous semiconductor film, and a step of polycrystallizing the amorphous semiconductor film in the state where the natural oxide film is left.

Abstract translation: 根据一个实施方案，提供了一种用于在表面上具有自然氧化物膜的非晶半导体膜多晶化的多晶化方法。 多晶化方法包括在将天然氧化物膜留在非晶半导体膜的表面上的同时清洁天然氧化物膜的步骤，以及在留下自然氧化物膜的状态下使非晶半导体膜多晶化的步骤。