Invention Grant
- Patent Title: Trench filling method and processing apparatus
- Patent Title (中): 沟槽灌装方法和加工设备
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Application No.: US14285874Application Date: 2014-05-23
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Publication No.: US09384974B2Publication Date: 2016-07-05
- Inventor: Daisuke Suzuki , Kazuya Takahashi , Mitsuhiro Okada , Katsuhiko Komori , Satoshi Onodera
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2013-110738 20130527
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.
Public/Granted literature
- US20140349468A1 TRENCH FILLING METHOD AND PROCESSING APPARATUS Public/Granted day:2014-11-27
Information query
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