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1.发明授权Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device 有权杂质扩散法，基板处理装置以及半导体装置的制造方法公开(公告)号：US08906792B2
公开(公告)日：2014-12-09
申请号：US13871297
申请日：2013-04-26
IPC分类号： H01L21/22 , H01L21/223 , H01L21/28
CPC分类号： H01L21/2236 , H01L21/28035
摘要： The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation 1); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation 3); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation 4), wherein in the operation 4, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.
摘要翻译： 杂质扩散方法包括：将形成有薄膜的物体转印到处理室中（操作1）; 将物体的温度升高到处理室中的蒸气扩散温度（操作3）; 并将含有杂质的含杂质的气体与惰性气体一起供给到处理室中，并将形成在温度升高对象物上的薄膜中的杂质扩散到蒸气扩散温度（操作4），其中 在操作4中，用于加速杂质扩散到薄膜中的杂质扩散加速气体与含杂质气体和惰性气体一起被供应到处理室中。
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公开(公告)号：US10570508B2
公开(公告)日：2020-02-25
申请号：US15852668
申请日：2017-12-22
发明人： Satoshi Takagi , Katsuhiko Komori , Mitsuhiro Okada , Masahisa Watanabe , Kazuya Takahashi , Kazuki Yano , Keisuke Fujita
IPC分类号： C23C16/24 , C23C16/455 , H01L21/205 , H01L21/22 , H01L21/285 , H01L21/3205 , H01L21/67 , H01L21/673 , C23C16/46
摘要： There is provided a film forming apparatus for performing a film forming process on substrates by heating the substrates while the substrates are held in a shelf shape by a substrate holder in a vertical reaction container. The film forming apparatus includes: an exhaust part configured to evacuate the reaction container; a gas supply part configured to supply a film forming gas into the reaction container; a heat insulating member provided above or below an arrangement region of the substrates to overlap with the arrangement region and configured to thermally insulate the arrangement region from an upper region above the arrangement region or a lower region below the arrangement region; and a through-hole provided in the heat insulating member at a position overlapping with central portions of the substrates to adjust a temperature distribution in a plane of each substrate held near the heat insulating member.
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公开(公告)号：US09478423B2
公开(公告)日：2016-10-25
申请号：US13954472
申请日：2013-07-30
IPC分类号： H01L21/223 , H01L21/324 , H01L21/322 , H01L21/22 , H01L21/67
CPC分类号： H01L21/22 , H01L21/223 , H01L21/67109
摘要： A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
摘要翻译： 提供了使用虚设基板将杂质气相扩散到待加工对象基板的扩散区域的方法。 该方法包括将目标衬底和虚拟衬底加载到衬底装载夹具中，将装载有目标衬底和虚设衬底的衬底装载夹具容纳在处理装置的处理室中，并将杂质蒸发扩散到 处理室中的目标衬底具有容纳衬底加载夹具。 蒸气扩散的杂质是硼，虚拟衬底的外表面包括具有不允许硼吸附的特性的材料。
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公开(公告)号：US11737276B2
公开(公告)日：2023-08-22
申请号：US17331813
申请日：2021-05-27
发明人： Sara Otsuki , Genji Nakamura , Muneyuki Otani , Kazuya Takahashi
CPC分类号： H10B43/27 , H01L21/02175 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/02194 , H01L21/02356 , H10B41/27
摘要： A method of manufacturing a semiconductor device according to the present disclosure includes forming a stack by alternately stacking insulating films and sacrificial films on a substrate; forming, in the stack, a through-hole extending in a thickness direction of the stack; forming a block insulating film, a charge trapping film, a tunnel insulating film, and a channel film on an inner surface of the through-hole in this order; forming, in the stack, a slit extending in the thickness direction of the stack separately from the through-hole; removing the sacrificial films through the slit so as to form a recess between adjacent insulating films; forming a first metal oxide film on an inner surface of the recess; forming, on the first metal oxide film, a second metal oxide film having a crystallization temperature lower than that of the first metal oxide film; and filling the recess with an electrode layer.
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公开(公告)号：US09984875B2
公开(公告)日：2018-05-29
申请号：US15436991
申请日：2017-02-20
IPC分类号： H01L21/00 , C23C16/24 , H01L21/02 , C23C16/455
CPC分类号： H01L21/02647 , C23C16/045 , C23C16/24 , C23C16/455 , C23C16/52 , H01L21/0243 , H01L21/02532 , H01L21/0262 , H01L21/02636
摘要： A method of forming a silicon film, a germanium film or a silicon germanium film on a target substrate having a fine recess formed on a surface of the target substrate by a chemical vapor deposition method includes placing the target substrate having the fine recess in a processing container, and supplying a film forming gas containing an element constituting a film to be formed and a chlorine-containing compound gas into the processing container. Adsorption of the film forming gas at an upper portion of the fine recess is selectively inhibited by the chlorine-containing compound gas.
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公开(公告)号：US09966256B2
公开(公告)日：2018-05-08
申请号：US14844193
申请日：2015-09-03
IPC分类号： C23C16/00 , H01L21/02 , C23C16/455 , C23C16/44 , C23C16/52 , C30B1/02 , C30B1/04 , C30B29/06 , C30B29/08 , C30B29/52
CPC分类号： H01L21/02532 , C23C16/02 , C23C16/22 , C23C16/24 , C30B1/026 , C30B1/04 , C30B29/08 , C30B29/52 , H01L21/02592 , H01L21/0262 , H01L21/02667 , H01L21/02669
摘要： There is provided a method of forming a film on a surface to be processed of a workpiece, the method including: accommodating the workpiece with a single-crystallized substance formed on the surface to be processed, into a processing chamber; supplying a crystallization suppressing process gas into the processing chamber such that a crystallization of the single-crystallized substance formed on the surface to be processed is suppressed; and supplying a source gas into the processing chamber to form an amorphous film on the surface to be processed of the workpiece.
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7.发明授权公开(公告)号：US09758865B2
公开(公告)日：2017-09-12
申请号：US14447060
申请日：2014-07-30
发明人： Kazuhide Hasebe , Kazuya Takahashi , Katsuhiko Komori , Yoshikazu Furusawa , Mitsuhiro Okada , Hiroyuki Hayashi , Akinobu Kakimoto
IPC分类号： C23C16/00 , C23C16/04 , C23C16/24 , H01L21/285 , H01L21/3205 , H01L21/768
CPC分类号： C23C16/045 , C23C16/24 , H01L21/28556 , H01L21/32055 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.
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8.发明授权公开(公告)号：US09540743B2
公开(公告)日：2017-01-10
申请号：US14566069
申请日：2014-12-10
CPC分类号： C30B1/023 , C30B29/06 , C30B29/54 , Y10T117/10
摘要： There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.
摘要翻译： 提供了一种使非晶硅结晶的方法，其包括：在衬底膜上形成第二非晶硅膜的层叠结构，然后形成第一非晶硅膜，第二非晶硅膜的晶体生长速度比第一非晶硅薄膜高 硅膜; 对所述层叠结构进行结晶化处理，使至少含有所述第二非晶硅膜的硅氧烷结晶化。
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公开(公告)号：US09384974B2
公开(公告)日：2016-07-05
申请号：US14285874
申请日：2014-05-23
IPC分类号： H01L21/02
CPC分类号： H01L21/02532 , H01L21/0245 , H01L21/02502 , H01L21/02592 , H01L21/02645 , H01L21/02667
摘要： The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.
摘要翻译： 本公开提供了一种用于填充形成在工件的绝缘膜上的沟槽的方法。 该方法包括在限定沟槽的壁表面上形成第一含杂质的非晶硅膜，在第一非晶硅膜上形成第二非晶硅膜，并在形成第二非晶硅膜之后退火工件。
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公开(公告)号：US09171722B2
公开(公告)日：2015-10-27
申请号：US13954472
申请日：2013-07-30
IPC分类号： H01L21/22 , H01L21/223 , H01L21/67
摘要： A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
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