Invention Grant
- Patent Title: Method for manufacturing semiconductor device and device manufactured by the same
- Patent Title (中): 制造半导体器件的方法及其制造方法
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Application No.: US14272672Application Date: 2014-05-08
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Publication No.: US09384996B2Publication Date: 2016-07-05
- Inventor: Po-Cheng Huang , Yu-Ting Li , Jen-Chieh Lin , Kun-Ju Li , Chang-Hung Kung , Yue-Han Wu , Chih-Chien Liu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L27/088 ; H01L29/66 ; H01L21/8234

Abstract:
A method for manufacturing a semiconductor device and a device manufactured by the same are provided. According to the embodiment, a substrate having at least a first area with a plurality of first gates and a second area with a plurality of second gates is provided, wherein the adjacent first gates and the adjacent second gates separated by an insulation, and a top surface of the insulation has a plurality of recesses. Then, a capping layer is formed over the first gate, the second gates and the insulation, and filling the recesses. The capping layer is removed until reaching the top surface of the insulation, thereby forming the insulating depositions filling up the recesses, wherein the upper surfaces of the insulating depositions are substantially aligned with the top surface of the insulation.
Public/Granted literature
- US20150325574A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURED BY THE SAME Public/Granted day:2015-11-12
Information query
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