Method for manufacturing semiconductor device and device manufactured by the same

Invention Grant

US09384996B2 Method for manufacturing semiconductor device and device manufactured by the same 有权

Title translation: 制造半导体器件的方法及其制造方法

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Patent Title: Method for manufacturing semiconductor device and device manufactured by the same
Patent Title (中): 制造半导体器件的方法及其制造方法
Application No.: US14272672

Application Date: 2014-05-08
Publication No.: US09384996B2

Publication Date: 2016-07-05
Inventor: Po-Cheng Huang , Yu-Ting Li , Jen-Chieh Lin , Kun-Ju Li , Chang-Hung Kung , Yue-Han Wu , Chih-Chien Liu
Applicant: UNITED MICROELECTRONICS CORP.
Applicant Address: TW Hsinchu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: TW Hsinchu
Agency: WPAT, PC
Agent Justin King
Main IPC: H01L21/3105
IPC: H01L21/3105 ; H01L27/088 ; H01L29/66 ; H01L21/8234

Method for manufacturing semiconductor device and device manufactured by the same

Abstract:

A method for manufacturing a semiconductor device and a device manufactured by the same are provided. According to the embodiment, a substrate having at least a first area with a plurality of first gates and a second area with a plurality of second gates is provided, wherein the adjacent first gates and the adjacent second gates separated by an insulation, and a top surface of the insulation has a plurality of recesses. Then, a capping layer is formed over the first gate, the second gates and the insulation, and filling the recesses. The capping layer is removed until reaching the top surface of the insulation, thereby forming the insulating depositions filling up the recesses, wherein the upper surfaces of the insulating depositions are substantially aligned with the top surface of the insulation.

Abstract(Chinese):

提供一种制造半导体器件的方法及其制造方法。根据实施例，提供具有至少具有多个第一栅极的第一区域和具有多个第二栅极的第二区域的衬底，其中相邻的第一栅极和相邻的第二栅极由绝缘体隔开，并且顶部绝缘体的表面具有多个凹部。然后，在第一栅极，第二栅极和绝缘体上形成覆盖层，并填充凹部。去除覆盖层直到达到绝缘体的顶表面，从而形成填充凹部的绝缘沉积物，其中绝缘沉积物的上表面基本上与绝缘体的顶表面对准。

Public/Granted literature

US20150325574A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DEVICE MANUFACTURED BY THE SAME Public/Granted day:2015-11-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理