Invention Grant
US09385049B2 Process for manufacturing integrated device incorporating low-voltage components and power components
有权
用于制造集成低压部件和功率部件的集成器件的制造方法
- Patent Title: Process for manufacturing integrated device incorporating low-voltage components and power components
- Patent Title (中): 用于制造集成低压部件和功率部件的集成器件的制造方法
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Application No.: US14607438Application Date: 2015-01-28
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Publication No.: US09385049B2Publication Date: 2016-07-05
- Inventor: Riccardo Depetro , Stefano Manzini
- Applicant: STMicroelectronics S.r.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Gardere Wynne Sewell LLP
- Priority: ITTO2009A0550 20090721
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/8238 ; H01L29/417 ; H01L21/762 ; H01L21/265 ; H01L21/311 ; H01L29/06 ; H01L29/08 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
An integrated device includes: a semiconductor body having a first, depressed, portion and second portions which project from the first portion; a STI structure, extending on the first portion of the semiconductor body, which delimits laterally the second portions and has a face adjacent to a surface of the first portion; low-voltage CMOS components, housed in the second portions, in a first region of the semiconductor body; and a power component, in a second region of the semiconductor body. The power component has at least one conduction region, formed in the first portion of the semiconductor body, and a conduction contact, coupled to the conduction region and traversing the STI structure in a direction perpendicular to the surface of the first portion of the semiconductor body.
Public/Granted literature
- US20150140750A1 PROCESS FOR MANUFACTURING INTEGRATED DEVICE INCORPORATING LOW-VOLTAGE COMPONENTS AND POWER COMPONENTS Public/Granted day:2015-05-21
Information query
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