Invention Grant
- Patent Title: Bi-layer hard mask for robust metallization profile
- Patent Title (中): 双层硬掩模,用于坚固的金属化轮廓
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Application No.: US14102090Application Date: 2013-12-10
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Publication No.: US09385086B2Publication Date: 2016-07-05
- Inventor: Shing-Chyang Pan , Ching-Hua Hsieh , Hong-Hui Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/4763 ; H01L23/532 ; H01L21/768 ; H01L23/522

Abstract:
A robust metallization profile is formed by forming two or more layers of hard mask with different density. Multi-layer metal hard mask is helpful especially in small feature size process, for example, 50 nm and below. Lower layers have higher density. In such ways, enough process window is offered by lower layers and at the same time, round hard mask profile is offered by upper layers.
Public/Granted literature
- US20150162282A1 BI-LAYER HARD MASK FOR ROBUST METALLIZATION PROFILE Public/Granted day:2015-06-11
Information query
IPC分类: