Invention Grant
US09385220B2 Semiconductor device having fin structure that includes dummy fins
有权
具有鳍结构的半导体器件包括虚拟翅片
- Patent Title: Semiconductor device having fin structure that includes dummy fins
- Patent Title (中): 具有鳍结构的半导体器件包括虚拟翅片
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Application No.: US14588989Application Date: 2015-01-05
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Publication No.: US09385220B2Publication Date: 2016-07-05
- Inventor: En-Chiuan Liou
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: TW103142048A 20141203
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/161 ; H01L29/24
Abstract:
A semiconductor device includes: a substrate, a fin-shaped structure on the substrate, and a dummy fin-shaped structure on the substrate and adjacent to the fin-shaped structure. Preferably, the fin-shaped structure includes a gate structure thereon and a first epitaxial layer adjacent to two sides of the gate structure, and the dummy fin-shaped structure includes a second epitaxial layer thereon. A contact plug is disposed on the first epitaxial layer and the second epitaxial layer.
Public/Granted literature
- US20160163819A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2016-06-09
Information query
IPC分类:
