Invention Grant
- Patent Title: Semiconductor growth substrates and associated systems and methods for die singulation
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Application No.: US14617423Application Date: 2015-02-09
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Publication No.: US09385278B2Publication Date: 2016-07-05
- Inventor: Xiaolong Fang , Lifang Xu , Tingkai Li , Thomas Gehrke
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/48 ; H01L21/66 ; H01L23/544 ; H01L33/00 ; H01L21/78

Abstract:
Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.
Public/Granted literature
- US20150155440A1 SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION Public/Granted day:2015-06-04
Information query
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