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1.发明申请SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION 有权半导体生长基底和相关系统及其相关方法公开(公告)号：US20150155440A1
公开(公告)日：2015-06-04
申请号：US14617423
申请日：2015-02-09
Applicant: Micron Technology, Inc.
Inventor： Xiaolong Fang , Lifang Xu , Tingkai Li , Thomas Gehrke
CPC classification number: H01L33/32 , H01L21/78 , H01L22/10 , H01L22/32 , H01L22/34 , H01L23/544 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/48 , H01L2924/0002 , H01L2924/00
Abstract: Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.
Abstract translation: 公开了半导体生长衬底和用于芯片分离的相关系统和方法。 用于制造半导体器件的代表性方法包括在位于衬底材料的相邻器件生长区域之间的切割街道上形成间隔开的结构。 该方法还可以包括通过将半导体材料的第一部分添加到器件生长区域并将半导体材料的第二部分添加到该结构体来外延生长半导体材料。 该方法还可以进一步包括在器件生长区域处形成半导体器件，并且在切割街道处通过在切割街道处去除间隔开的结构和下面的衬底材料来将半导体器件彼此分离。
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公开(公告)号：US09385278B2
公开(公告)日：2016-07-05
申请号：US14617423
申请日：2015-02-09
Applicant: Micron Technology, Inc.
Inventor： Xiaolong Fang , Lifang Xu , Tingkai Li , Thomas Gehrke
CPC classification number: H01L33/32 , H01L21/78 , H01L22/10 , H01L22/32 , H01L22/34 , H01L23/544 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/48 , H01L2924/0002 , H01L2924/00
Abstract: Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street.
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