Invention Grant
- Patent Title: Method for depositing a film on a substrate, and film deposition apparatus
- Patent Title (中): 在基板上沉积膜的方法和成膜装置
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Application No.: US14602403Application Date: 2015-01-22
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Publication No.: US09388496B2Publication Date: 2016-07-12
- Inventor: Hideomi Hane , Takahito Umehara
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2014-013739 20140128
- Main IPC: H01L21/31
- IPC: H01L21/31 ; C23C16/458 ; H01L21/02 ; C23C16/448 ; C23C16/44 ; C23C16/455 ; H01L21/677 ; H01L21/687
Abstract:
A method for processing a substrate using a substrate processing apparatus is provided. The substrate processing apparatus includes a process chamber and a rotatable turntable having a substrate receiving part provided in the process chamber. In the method, a substrate is placed on a substrate receiving part, and the substrate is processed by supplying process gases into the process chamber. At least a water vapor is supplied into the chamber when the substrate is placed on the substrate receiving part. After that, the substrate is carried out of the process chamber.
Public/Granted literature
- US20150214029A1 METHOD FOR PROCESSING A SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS Public/Granted day:2015-07-30
Information query
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