公开(公告)号：US10344382B2

公开(公告)日：2019-07-09

申请号：US14707663

申请日：2015-05-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Takahito Umehara ,  Takehiro Kasama ,  Tsubasa Watanabe

IPC: C23C16/44 ,  C23C16/455

Abstract: There is provided a film forming apparatus including a raw material gas nozzle provided with gas discharge holes for discharging a mixed gas of a raw material gas and a carrier gas; a flow regulating plate portion extended along the longitudinal direction of the raw material gas nozzle; a central region configured to supply a separating gas from a center side within a vacuum container toward a substrate loading surface of a rotary table; a protuberance portion protruded from the flow regulating plate portion toward the rotary table at a position shifted toward a center side of the rotary table from the gas discharge holes; and a protuberance portion configured to restrain the separating gas from flowing between the flow regulating plate portion and the rotary table; and an exhaust port configured to vacuum exhaust the interior of the vacuum container.

公开(公告)号：US11970768B2

公开(公告)日：2024-04-30

申请号：US16993432

申请日：2020-08-14

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Shimon Otsuki ,  Takeshi Oyama ,  Ren Mukouyama ,  Jun Ogawa ,  Noriaki Fukiage

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/345 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/52 ,  H01J37/32449 ,  H01L21/0217 ,  H01L21/0228

Abstract: There is provided a method of forming a silicon nitride film on a substrate having first and second films formed thereon, wherein the first film and the second film have different incubation times. The method includes: supplying a processing gas composed of a silicon halide having Si—Si bonds to the substrate; supplying a non-plasmarized second nitriding gas to the substrate; forming a thin silicon nitride layer covering the first film and the second film by repeating the supplying the processing gas and the supplying the second nitriding gas in a sequential order; supplying a plasmarized modifying gas to the substrate and modifying the thin silicon nitride layer; and forming the silicon nitride film on the modified thin silicon nitride layer by supplying the raw material gas and the first nitriding gas to the substrate.

公开(公告)号：US10550470B2

公开(公告)日：2020-02-04

申请号：US16171667

申请日：2018-10-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Takeshi Oyama ,  Hiroaki Ikegawa ,  Jun Ogawa

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/687 ,  C23C16/46

Abstract: There is provided a film forming apparatus for performing a film forming process by supplying a film forming gas to a substrate in a vacuum atmosphere, comprising: a processing container in which a mounting part for mounting a substrate thereon is provided; a heating part configured to heat the substrate mounted on the mounting part; an exhaust part configured to evacuate an inside of the processing container; a cooling gas supply part configured to supply a cooling gas into the processing container; a purge gas supply part configured to supply a purge gas into the processing container; and a control part configured to output a control signal so as to execute a step of applying a stress to a thin film formed inside the processing container.

公开(公告)号：US20180366315A1

公开(公告)日：2018-12-20

申请号：US16005072

申请日：2018-06-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Jun Ogawa ,  Noriaki Fukiage ,  Hiroaki Ikegawa ,  Yasuo Kobayashi ,  Takeshi Oyama

IPC: H01L21/02 ,  H01L21/687 ,  H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/52

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45553 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32 ,  H01J37/3222 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/20214 ,  H01J2237/3321 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film forming process of forming a silicon nitride film by depositing a molecular layer of silicon nitride on a surface of a substrate, in which an uneven pattern is formed and a base made of metal reacting with halogen is exposed, includes alternately performing adsorbing silicon halide to the surface of the substrate and nitriding the silicon halide, wherein the film forming process is performed under a condition in which the substrate is heated at a film-forming temperature, the film-forming temperature falling within a range of equal to or higher than a minimum film-forming temperature at which the molecular layer of the silicon nitride is formed by reaction of the silicon halide and a plasmarized nitriding gas and less than a maximum film-forming temperature at which the reaction of the base made of metal and the silicon halide goes ahead.

公开(公告)号：US12077855B2

公开(公告)日：2024-09-03

申请号：US18053880

申请日：2022-11-09

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Akihiro Kuribayashi ,  Noriaki Fukiage

IPC: C23C16/44 ,  B08B7/00 ,  B08B13/00 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/687

CPC classification number: C23C16/4405 ,  B08B7/0035 ,  B08B13/00 ,  C23C16/45544 ,  C23C16/4584 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/68764

Abstract: With respect to a cleaning method of cleaning an inside of a processing chamber in a film deposition apparatus including a rotary table rotatably provided in the processing chamber, multiple mounting areas being provided on the rotary table in a circumferential direction, the cleaning method includes (a) discharging a carrier gas and a cleaning gas with rotating the rotary table, a flow rate of the carrier gas being adjusted to a first flow rate, (b) discharging the carrier gas and the cleaning gas with rotating the rotary table, the flow rate of the carrier gas being adjusted to a second flow rate less than the first flow rate, and (c) performing switching from (a) to (b) and switching from (b) to (a) a predetermined number of times while the rotary table rotates by one revolution, the predetermined number being equal to a number of the multiple mounting areas.

公开(公告)号：US11414753B2

公开(公告)日：2022-08-16

申请号：US17086634

申请日：2020-11-02

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Takeshi Oyama ,  Kentaro Oshimo ,  Yusuke Suzuki ,  Jun Ogawa

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/511 ,  B08B9/00

Abstract: A processing method according to one aspect of the present disclosure includes varying pressure of a processing chamber in a state in which a plasma of a purge gas is formed in the processing chamber, the varying including removing a film deposited in the processing chamber, with the formed plasma.

公开(公告)号：US20180142350A1

公开(公告)日：2018-05-24

申请号：US15816864

申请日：2017-11-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki Fukiage ,  Kentaro Oshimo ,  Shimon Otsuki ,  Hideomi Hane ,  Jun Ogawa ,  Hiroaki Ikegawa

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45502 ,  C23C16/45551 ,  C23C16/56

Abstract: There is provided a film formation processing method for forming, in a vacuum atmosphere, a silicon nitride film along an inner wall surface of a recess constituting a pattern formed on a surface of a substrate, which includes: forming the silicon nitride film on the substrate by repeating, plural times, a process of supplying a raw material gas containing silicon to the substrate and subsequently, supplying an ammonia gas to the substrate to generate a silicon nitride on the substrate; and subsequently, modifying the silicon nitride film by activating a hydrogen gas and an ammonia gas and supplying the activated hydrogen gas and the activated ammonia gas to the substrate.

公开(公告)号：US11725276B2

公开(公告)日：2023-08-15

申请号：US17447721

申请日：2021-09-15

Applicant: Tokyo Electron Limited

Inventor： Hideomi Hane ,  Hyunjoon Bang ,  Noriaki Fukiage

IPC: C23C16/44 ,  H01L21/02 ,  H01L21/67 ,  C23C16/02 ,  H01L21/324

CPC classification number: C23C16/4404 ,  C23C16/0227 ,  H01L21/02046 ,  H01L21/02263 ,  H01L21/324 ,  H01L21/67248

Abstract: A plasma purge method that is performed after dry cleaning in a process container and before applying a deposition process to a substrate includes: (a) activating and supplying a first process gas containing Cl2 in the process container; and (b) activating and supplying a second process gas containing H2 and O2 in the process container.

公开(公告)号：US11201053B2

公开(公告)日：2021-12-14

申请号：US16890216

申请日：2020-06-02

Applicant: TOKYO ELECTRON LIMITED

Inventor： Noriaki Fukiage ,  Takayuki Karakawa ,  Toyohiro Kamada ,  Akihiro Kuribayashi ,  Takeshi Oyama ,  Jun Ogawa ,  Kentaro Oshimo ,  Shimon Otsuki ,  Hideomi Hane

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/04 ,  C23C16/34

Abstract: A method for forming a silicon nitride film to cover a stepped portion formed by exposed surfaces of first and second base films in a substrate, includes: forming a nitride film or a seed layer to cover the stepped portion, wherein the nitride film is formed by supplying, to the substrate, a nitrogen-containing base-film nitriding gas for nitriding the base films, exposing the substrate to plasma and nitriding the surface of the stepped portion, and the seed layer is composed of a silicon-containing film formed by supplying a raw material gas of silicon to the substrate and is configured such that the silicon nitride film uniformly grows on the surfaces of the base films; and forming the silicon nitride film on the seed layer by supplying, to the substrate, a second raw material gas of silicon and a silicon-nitriding gas for nitriding silicon.

公开(公告)号：US11171014B2

公开(公告)日：2021-11-09

申请号：US16002081

申请日：2018-06-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hideomi Hane ,  Kentaro Oshimo ,  Shimon Otsuki ,  Jun Ogawa ,  Noriaki Fukiage ,  Hiroaki Ikegawa ,  Yasuo Kobayashi ,  Takeshi Oyama

IPC: H01L21/32 ,  H01L21/3213 ,  H01L21/02 ,  H01J37/32

Abstract: There is provided a substrate processing method, including: forming a silicon nitride film laminated on an etching target film by supplying a film forming gas to a substrate; oxidizing a surface of the silicon nitride film to form an oxide layer by supplying an oxidizing gas to the substrate; and etching the etching target film by supplying an etching gas containing halogen to the substrate, in a state in which the etching target film and the oxide layer are exposed on a surface of the substrate.