Invention Grant
- Patent Title: System and method to determine depth for optical wafer inspection
- Patent Title (中): 确定光学晶圆检查深度的系统和方法
-
Application No.: US13840329Application Date: 2013-03-15
-
Publication No.: US09389349B2Publication Date: 2016-07-12
- Inventor: Pavel Kolchin , Mikhail Haurylau , Robert Danen
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Simpson & Simpson, PLLC
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G02B5/28 ; G01N21/95 ; G02B5/30

Abstract:
A computer-based method for inspecting a wafer, including: storing, in a memory element for at least one computer, computer readable instructions; detecting a first light beam rotating in a first spiral about a first central axis; and executing, using a processor for the at least one computer, the computer readable instructions to generate, using the detected first light beam, an image including at least one shape, determine an orientation of the at least one shape or a size of the at least one shape, and calculate a depth of a defect in the wafer according to the orientation or the size.
Public/Granted literature
- US20140268117A1 SYSTEM AND METHOD TO DETERMINE DEPTH FOR OPTICAL WAFER INSPECTION Public/Granted day:2014-09-18
Information query