Invention Grant
- Patent Title: Semiconductor memory device
-
Application No.: US14800256Application Date: 2015-07-15
-
Publication No.: US09390780B2Publication Date: 2016-07-12
- Inventor: Kyo-min Sohn
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0020397 20120228
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/16 ; G11C7/10 ; G11C11/408 ; G11C11/4096 ; G11C11/4097

Abstract:
A semiconductor memory device includes a plurality of memory banks in a first region, a data terminal to which an input data signal is input, the data terminal being in a second region, and an inverting circuit that inverts or non-inverts the input data signal in response to an inversion control signal indicating whether the input data signal has been inverted, wherein at least one inverting circuit is disposed for each of the plurality of memory banks.
Public/Granted literature
- US20150318028A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2015-11-05
Information query