Techniques and mechanisms for determining a write recovery time of a memory device. In an embodiment, thermal detection logic detects a signal from a thermal sensor indicating a temperature state of a resource of the memory device. A value of a write recovery parameter is set based on the signal from the thermal sensor. In another embodiment, command logic generates a signal to precharge one or more cells of the memory device. The write recovery parameter is used by timer logic to control a timing of the signal to precharge the one or more cells.