Invention Grant
- Patent Title: E-fuse test device and semiconductor device including the same
- Patent Title (中): 电子熔丝测试装置和包括其的半导体器件
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Application No.: US14713458Application Date: 2015-05-15
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Publication No.: US09390812B2Publication Date: 2016-07-12
- Inventor: Hyun-Min Choi , In-Gyu Park , Jung-Hak Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0081862 20140701
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16 ; G11C29/02 ; G11C29/50 ; G11C29/12

Abstract:
An e-fuse test device is provided. The e-fuse test device may include a first transistor, and a fuse array connected to a source/drain terminal of the first transistor. The fuse array may include n fuse groups, each of the fuse groups may include one end, the other end, and m first fuse elements connected in series to each other between the one end and the other end, the one end of each of the fuse groups may be connected to each other, and the other end of each of the fuse groups may be connected to the source/drain terminal of the first transistor, and the n and m are natural numbers that are equal to or larger than two.
Public/Granted literature
- US20160005494A1 E-FUSE TEST DEVICE AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2016-01-07
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