发明授权
US09390914B2 Wet oxidation process performed on a dielectric material formed from a flowable CVD process
有权
在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
- 专利标题： Wet oxidation process performed on a dielectric material formed from a flowable CVD process
- 专利标题（中）： 在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
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申请号： US13396410申请日： 2012-02-14
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公开(公告)号： US09390914B2公开(公告)日： 2016-07-12
- 发明人: Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
- 申请人： Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
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