Invention Grant
US09390914B2 Wet oxidation process performed on a dielectric material formed from a flowable CVD process
有权
在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
- Patent Title: Wet oxidation process performed on a dielectric material formed from a flowable CVD process
- Patent Title (中): 在由可流动CVD工艺形成的电介质材料上进行湿氧化处理
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Application No.: US13396410Application Date: 2012-02-14
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Publication No.: US09390914B2Publication Date: 2016-07-12
- Inventor: Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
- Applicant: Linlin Wang , Abhijit Basu Mallick , Nitin K. Ingle
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
Public/Granted literature
- US20120142198A1 WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS Public/Granted day:2012-06-07
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