Abstract:
A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.
Abstract:
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
Abstract:
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
Abstract:
A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.
Abstract:
A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.
Abstract:
Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.
Abstract:
Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.
Abstract:
A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed.