Photographic mask and method for making same

    公开(公告)号:US10331026B2

    公开(公告)日:2019-06-25

    申请号:US15070134

    申请日:2016-03-15

    Abstract: A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.

    Wet oxidation process performed on a dielectric material formed from a flowable CVD process
    2.
    发明授权
    Wet oxidation process performed on a dielectric material formed from a flowable CVD process 有权
    在由可流动CVD工艺形成的电介质材料上进行湿氧化处理

    公开(公告)号:US09390914B2

    公开(公告)日:2016-07-12

    申请号:US13396410

    申请日:2012-02-14

    CPC classification number: H01L21/02326 H01L21/02343

    Abstract: Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

    Abstract translation: 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中,在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料,固化设置在衬底上的电介质材料,对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

    WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS
    4.
    发明申请
    WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 有权
    在可流动CVD过程中形成的介电材料上进行的湿氧化过程

    公开(公告)号:US20120142198A1

    公开(公告)日:2012-06-07

    申请号:US13396410

    申请日:2012-02-14

    CPC classification number: H01L21/02326 H01L21/02343

    Abstract: Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

    Abstract translation: 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中,在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料,固化设置在衬底上的电介质材料,对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

    SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS
    5.
    发明申请
    SILICON-SELECTIVE DRY ETCH FOR CARBON-CONTAINING FILMS 有权
    用于含碳膜的硅选择干燥剂

    公开(公告)号:US20110053380A1

    公开(公告)日:2011-03-03

    申请号:US12551180

    申请日:2009-08-31

    CPC classification number: H01L21/3065 H01L21/31116

    Abstract: A method of etching silicon-and-carbon-containing material is described and includes a SiConi™ etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi™ etch reducing the carbon content in the near surface region and allowing the SiConi™ etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi™ etch further improving the effective etch rate.

    Abstract translation: 描述了一种蚀刻含硅和碳的材料的方法,并且包括与活性氧气流组合的SiConi TM蚀刻。 可以在SiConi™蚀刻之前引入活性氧,从而减少近表面区域的碳含量,并允许SiConi™蚀刻进行得更快。 或者,可以在SiConi TM蚀刻期间引入活性氧,进一步提高有效蚀刻速率。

    PHOTOGRAPHIC MASK AND METHOD FOR MAKING SAME
    6.
    发明申请
    PHOTOGRAPHIC MASK AND METHOD FOR MAKING SAME 审中-公开
    摄影掩模及其制作方法

    公开(公告)号:US20170031238A1

    公开(公告)日:2017-02-02

    申请号:US15070134

    申请日:2016-03-15

    CPC classification number: G03F1/42 G03F1/50 H04R2201/003

    Abstract: A photographic mask is provided in the present disclosure. The photographic mask includes a silicon-on-insulator (SOI) base and a stepped opening formed in the SOI base. The SOI base includes a silicon substrate, a median layer and a silicon layer, the median layer is arranged between the insulator substrate and the insulator layer. The stepped opening includes a first opening portion and a second opening portion, the first opening portion penetrates through the silicon layer and has a first opening area; the second opening portion at least penetrates through the silicon substrate and is aligned with the first opening portion. The second opening portion has a second opening area greater than the first opening area of the first opening portion. The present disclosure further provides a method for making a photographic mask.

    Abstract translation: 在本公开中提供了一种照相掩模。 摄影掩模包括绝缘体上硅(SOI)基底和形成在SOI基底中的阶梯式开口。 SOI基底包括硅衬底,中间层和硅层,中间层布置在绝缘体衬底和绝缘体层之间。 所述阶梯式开口包括第一开口部和第二开口部,所述第一开口部穿透所述硅层,并具有第一开口面积; 第二开口部分至少穿过硅衬底并与第一开口部分对准。 第二开口部分具有大于第一开口部分的第一开口面积的第二开口面积。 本公开还提供了一种制造照相掩模的方法。

    FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING
    7.
    发明申请
    FLOWABLE SILICON-CARBON-NITROGEN LAYERS FOR SEMICONDUCTOR PROCESSING 审中-公开
    用于半导体加工的可流动的硅 - 碳 - 氮层

    公开(公告)号:US20130217240A1

    公开(公告)日:2013-08-22

    申请号:US13590611

    申请日:2012-08-21

    Abstract: Methods are described for forming a dielectric layer on a semiconductor substrate. The methods may include providing a silicon-containing precursor and an energized nitrogen-containing precursor to a chemical vapor deposition chamber. The silicon-containing precursor and the energized nitrogen-containing precursor may be reacted in the chemical vapor deposition chamber to deposit a flowable silicon-carbon-nitrogen material on the substrate. The methods may further include treating the flowable silicon-carbon-nitrogen material to form the dielectric layer on the semiconductor substrate.

    Abstract translation: 描述了在半导体衬底上形成电介质层的方法。 所述方法可以包括向化学气相沉积室提供含硅前体和通电的含氮前体。 含硅前体和带电的含氮前体可以在化学气相沉积室中反应,以在基底上沉积可流动的硅 - 碳 - 氮材料。 所述方法还可以包括处理可流动的硅 - 碳 - 氮材料以在半导体衬底上形成电介质层。

    WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS
    9.
    发明申请
    WET OXIDATION PROCESS PERFORMED ON A DIELECTRIC MATERIAL FORMED FROM A FLOWABLE CVD PROCESS 审中-公开
    在可流动CVD过程中形成的介电材料上进行的湿氧化过程

    公开(公告)号:US20110151677A1

    公开(公告)日:2011-06-23

    申请号:US12643196

    申请日:2009-12-21

    CPC classification number: H01L21/02326 H01L21/02343

    Abstract: Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

    Abstract translation: 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中,在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料,固化设置在衬底上的电介质材料,对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

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