Invention Grant
- Patent Title: Etching method, storage medium and etching apparatus
- Patent Title (中): 蚀刻方法，存储介质和蚀刻装置
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Application No.: US14579262Application Date: 2014-12-22
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Publication No.: US09390933B2Publication Date: 2016-07-12
- Inventor: Kensaku Narushima , Kohichi Satoh , Motoko Nakagomi , Eiichi Komori , Taiki Katou
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2013-270504 20131226; JP2014-246894 20141205
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/306 ; H01L21/67
Abstract:
There is a method of selectively etching a silicon oxide film among a silicon nitride film and the silicon oxide film formed on a surface of a substrate to be processed, the method including: under a vacuum atmosphere, intermittently supplying at least one of a first processing gas composed of a hydrogen fluoride gas and an ammonia gas and a second processing gas composed of a compound of nitrogen, hydrogen and fluorine, to the substrate to be processed multiple times.
Public/Granted literature
- US20150187593A1 ETCHING METHOD, STORAGE MEDIUM AND ETCHING APPARATUS Public/Granted day:2015-07-02
Information query
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