Invention Grant
US09390939B2 Methods of forming MIS contact structures for semiconductor devices and the resulting devices
有权
形成用于半导体器件和所得器件的MIS接触结构的方法
- Patent Title: Methods of forming MIS contact structures for semiconductor devices and the resulting devices
- Patent Title (中): 形成用于半导体器件和所得器件的MIS接触结构的方法
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Application No.: US14289737Application Date: 2014-05-29
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Publication No.: US09390939B2Publication Date: 2016-07-12
- Inventor: Ruilong Xie , Xiuyu Cai , Kangguo Cheng , Ali Khakifirooz
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/3213 ; H01L21/02 ; H01L29/66 ; H01L21/768 ; H01L29/78
Abstract:
One method disclosed includes, among other things, conformably depositing a layer of contact insulating material and a conductive material layer in a contact opening, forming a reduced-thickness sacrificial material layer in the contact opening so as to expose a portion, but not all, of the conductive material layer, removing portions of the conductive material layer and the layer of contact insulating material positioned above the upper surface of the reduced-thickness sacrificial material layer, removing the reduced-thickness sacrificial material layer, and forming a conductive contact in the contact opening that contacts the recessed portions of the conductive material layer and the layer of contact insulating material.
Public/Granted literature
- US20150349083A1 METHODS OF FORMING MIS CONTACT STRUCTURES FOR SEMICONDUCTOR DEVICES AND THE RESULTING DEVICES Public/Granted day:2015-12-03
Information query
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