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    Gate structure cut after formation of epitaxial active regions
    5.
    发明授权
    Gate structure cut after formation of epitaxial active regions 有权
    形成外延活性区后的门结构切割

    公开(公告)号：US09559009B2

    公开(公告)日：2017-01-31

    申请号：US14876212

    申请日：2015-10-06

    申请人： International Business Machines Corporation ,  GLOBALFOUNDRIES Inc.

    发明人： Xiuyu Cai ,  Kangguo Cheng ,  Johnathan E. Faltermeier ,  Ali Khakifirooz ,  Theodorus E. Standaert ,  Ruilong Xie

    IPC分类号： H01L21/311 ,  H01L21/8234 ,  H01L29/417 ,  H01L27/088 ,  H01L29/08 ,  H01L21/84 ,  H01L29/66

    CPC分类号： H01L21/823437 ,  H01L21/31111 ,  H01L21/823418 ,  H01L21/823431 ,  H01L21/823468 ,  H01L21/845 ,  H01L27/088 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66795 ,  H01L29/785

    摘要： A gate structure straddling a plurality of semiconductor material portions is formed. Source regions and drain regions are formed in the plurality of semiconductor material portions, and a gate spacer laterally surrounding the gate structure is formed. Epitaxial active regions are formed from the source and drain regions by a selective epitaxy process. The assembly of the gate structure and the gate spacer is cut into multiple portions employing a cut mask and an etch to form multiple gate assemblies. Each gate assembly includes a gate structure portion and two disjoined gate spacer portions laterally spaced by the gate structure portion. Portions of the epitaxial active regions can be removed from around sidewalls of the gate spacers to prevent electrical shorts among the epitaxial active regions. A dielectric spacer or a dielectric liner may be employed to limit areas in which metal semiconductor alloys are formed.

    摘要翻译： 形成跨越多个半导体材料部分的栅极结构。 源极区域和漏极区域形成在多个半导体材料部分中，并且形成横向围绕栅极结构的栅极间隔物。 通过选择性外延工艺从源极和漏极区域形成外延有源区。 通过切割掩模和蚀刻将栅极结构和栅极间隔物的组装切成多个部分以形成多个栅极组件。 每个门组件包括栅极结构部分和由栅极结构部分横向隔开的两个分离的栅极间隔部分。 可以从栅极间隔物的侧壁的周围去除外延有源区的一部分，以防止外延有源区中的电短路。 可以使用电介质间隔物或电介质衬垫来限制形成金属半导体合金的区域。

    Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices
    10.
    发明授权
    Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices 有权
    使用替代栅极技术形成finFET半导体器件的方法和所得到的器件

    公开(公告)号：US09236480B2

    公开(公告)日：2016-01-12

    申请号：US14044120

    申请日：2013-10-02

    申请人： GLOBALFOUNDRIES Inc. ,  International Business Machines Corporation

    发明人： Ruilong Xie ,  Xiuyu Cai ,  Kangguo Cheng ,  Ali Khakifirooz

    IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8234

    CPC分类号： H01L29/0649 ,  H01L21/76224 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/41791 ,  H01L29/42376 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785 ,  H01L29/7851

    摘要： One method disclosed includes, among other things, forming a raised isolation post structure between first and second fins, wherein the raised isolation post structure partially defines first and second spaces between the first and second fins, respectively, and forming a gate structure around the first and second fins and the raised isolation post structure, wherein at least portions of the gate structure are positioned in the first and second spaces. One illustrative device includes, among other things, first and second fins, a raised isolation post structure positioned between the first and second fins, first and second spaces defined by the fins and the raised isolation post structure, and a gate structure positioned around a portion of the fins and the isolation post structure.

    摘要翻译： 所公开的一种方法包括在第一和第二散热片之间形成凸起的隔离柱结构，其中所述凸起的隔离柱结构分别部分地限定所述第一和第二鳍之间的第一和第二空间，并且形成围绕所述第一和第二鳍的栅极结构 和第二鳍片和凸起的隔离柱结构，其中栅极结构的至少一部分位于第一和第二空间中。 一个说明性装置尤其包括第一和第二散热片，位于第一和第二散热片之间的凸起的隔离柱结构，由翅片和凸起的隔离柱结构限定的第一和第二空间以及围绕一部分 的翅片和隔离柱结构。