Invention Grant
- Patent Title: On-chip RF shields with backside redistribution lines
- Patent Title (中): 具有背面再分配线的片上RF屏蔽
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Application No.: US14505270Application Date: 2014-10-02
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Publication No.: US09390973B2Publication Date: 2016-07-12
- Inventor: Hans-Joachim Barth , Jens Pohl , Gottfried Beer , Heinrich Koerner
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/48 ; H01L23/552 ; H01L23/66 ; H01L21/3065 ; H01L21/308

Abstract:
Structures of a system on chip and methods of forming a system on chip are disclosed. In one embodiment, a method of fabricating the system on chip includes forming a through substrate opening from a back surface of a substrate, the through substrate opening disposed between a first and a second region, the first region comprising devices for RF circuitry and the second region comprising devices for other circuitry. The method further includes forming patterns for redistribution lines on a photo resist layer, the photo resist layer disposed under the back surface, and filling the through substrate opening and the patterns for redistribution lines with a conductive material.
Public/Granted literature
- US20150024591A1 On-Chip RF Shields with Backside Redistribution Lines Public/Granted day:2015-01-22
Information query
IPC分类: