Invention Grant
- Patent Title: Methods for forming silicon-based hermetic thermal solutions
- Patent Title (中): 形成硅基密封热解决方案的方法
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Application No.: US13445734Application Date: 2012-04-12
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Publication No.: US09391000B2Publication Date: 2016-07-12
- Inventor: Cheng-Chieh Hsieh , Jing-Cheng Lin
- Applicant: Cheng-Chieh Hsieh , Jing-Cheng Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/473
- IPC: H01L23/473 ; H01L21/48
Abstract:
A method includes forming a first oxide layer on a surface of an integrated heat spreader, and forming a second oxide layer on top surfaces of fins, wherein the fins are parts of a heat sink. The integrated heat spreader is bonded to the heat sink through the bonding of the first oxide layer to the second oxide layer.
Public/Granted literature
- US20130270690A1 Methods for Forming Silicon-Based Hermetic Thermal Solutions Public/Granted day:2013-10-17
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