Invention Grant
- Patent Title: Embedded capacitor
- Patent Title (中): 嵌入式电容器
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Application No.: US14471546Application Date: 2014-08-28
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Publication No.: US09391156B2Publication Date: 2016-07-12
- Inventor: Hans-Peter Moll , Peter Baars , Jan Hoentschel
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/28 ; H01L29/49 ; H01L27/06 ; H01L23/522
Abstract:
A method of manufacturing a semiconductor device is provided, including forming a gate electrode of a dummy transistor device on a semiconductor substrate, forming a high-k material layer over and adjacent to the gate electrode and forming a metal layer on the high-k material layer over and adjacent to the gate electrode to form a capacitor.
Public/Granted literature
- US20160064471A1 EMBEDDED CAPACITOR Public/Granted day:2016-03-03
Information query
IPC分类:
