Invention Grant
- Patent Title: Low quiescent current pull-down circuit
- Patent Title (中): 低静态电流下拉电路
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Application No.: US14311907Application Date: 2014-06-23
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Publication No.: US09391519B2Publication Date: 2016-07-12
- Inventor: Danzhu Lu , Xiaohan Gong , Bin Shao
- Applicant: Analog Devices Global
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H03K3/356
- IPC: H03K3/356 ; H02M3/158 ; H03K19/017

Abstract:
A device to detect an electrical signal is provided. The device includes sensing, output, and pull-down nodes. The device includes a pull-down circuit having a native metal-oxide-semiconductor field-effect transistor (MOSFET) to pull down the output node to approximately a voltage of the pull-down node. The device includes a switch circuit having a junction field-effect transistor (JFET). The JFET turns on the pull-down circuit in response to a voltage of the sensing node being less than a first threshold. The JFET also turns off the pull-down circuit in response to the voltage of the sensing node being greater than the first threshold.
Public/Granted literature
- US20150349637A1 LOW QUIESCENT CURRENT PULL-DOWN CIRCUIT Public/Granted day:2015-12-03
Information query
IPC分类: