An NBTI malfunction of a P-channel MOS transistor is prevented. A semiconductor integrated circuit device includes a reset pulse control unit RPC. The reset pulse control unit RPC generates a reset pulse RP for recovery from degradation caused by NBTI of a MOS transistor that receives a negative voltage at the gate of the transistor in a standby status. After the generated reset pulse RP is inputted to the gate of the MOS transistor, an action control signal ACC for activating the MOS transistor is inputted to the gate of the MOS transistor to activate the transistor.