公开(公告)号：US20150109046A1

公开(公告)日：2015-04-23

申请号：US14506621

申请日：2014-10-04

Applicant: Renesas Electronics Corporation

Inventor： Noritaka Fukuo ,  Hideki AONO ,  Eiichi Murakami

IPC: H03K17/284 ,  H03K17/30

CPC classification number: H03K17/284 ,  H03K17/145 ,  H03K17/302

Abstract: An NBTI malfunction of a P-channel MOS transistor is prevented. A semiconductor integrated circuit device includes a reset pulse control unit RPC. The reset pulse control unit RPC generates a reset pulse RP for recovery from degradation caused by NBTI of a MOS transistor that receives a negative voltage at the gate of the transistor in a standby status. After the generated reset pulse RP is inputted to the gate of the MOS transistor, an action control signal ACC for activating the MOS transistor is inputted to the gate of the MOS transistor to activate the transistor.

Abstract translation: 防止P沟道MOS晶体管的NBTI故障。 半导体集成电路装置包括复位脉冲控制单元RPC。 复位脉冲控制单元RPC产生复位脉冲RP，以从在待机状态下接收晶体管的栅极处的负电压的MOS晶体管的NBTI引起的劣化恢复。 在产生的复位脉冲RP被输入到MOS晶体管的栅极之后，用于激活MOS晶体管的动作控制信号ACC被输入到MOS晶体管的栅极以激活晶体管。

公开(公告)号：US09391606B2

公开(公告)日：2016-07-12

申请号：US14506621

申请日：2014-10-04

Applicant: Renesas Electronics Corporation

Inventor： Noritaka Fukuo ,  Hideki Aono ,  Eiichi Murakami

IPC: H03L7/00 ,  H03K17/284 ,  H03K17/30

CPC classification number: H03K17/284 ,  H03K17/145 ,  H03K17/302

Abstract: An NBTI malfunction of a P-channel MOS transistor is prevented. A semiconductor integrated circuit device includes a reset pulse control unit RPC. The reset pulse control unit RPC generates a reset pulse RP for recovery from degradation caused by NBTI of a MOS transistor that receives a negative voltage at the gate of the transistor in a standby status. After the generated reset pulse RP is inputted to the gate of the MOS transistor, an action control signal ACC for activating the MOS transistor is inputted to the gate of the MOS transistor to activate the transistor.

Abstract translation: 防止P沟道MOS晶体管的NBTI故障。 半导体集成电路装置包括复位脉冲控制单元RPC。 复位脉冲控制单元RPC产生复位脉冲RP，以从在待机状态下接收晶体管的栅极处的负电压的MOS晶体管的NBTI引起的劣化恢复。 在产生的复位脉冲RP被输入到MOS晶体管的栅极之后，用于激活MOS晶体管的动作控制信号ACC被输入到MOS晶体管的栅极以激活晶体管。