Invention Grant
- Patent Title: Method for forming projections and depressions, sealing structure, and light-emitting device
- Patent Title (中): 用于形成凹凸的方法，密封结构和发光装置
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Application No.: US14254066Application Date: 2014-04-16
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Publication No.: US09394614B2Publication Date: 2016-07-19
- Inventor: Yusuke Nishido
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2013-088000 20130419
- Main IPC: H01L21/033
- IPC: H01L21/033 ; C23F1/02 ; C23F1/12 ; C23F1/44 ; H01L51/52
Abstract:
A novel method for forming projections and depressions is provided. A novel sealing structure is provided. A novel light-emitting device is provided. A first step of forming a film containing at least two kinds of metals having different etching rates over a surface; a second step of heating the film so that the metal having a lower etching rate segregates; a third step of selectively etching the metal having a higher etching rate; and a fourth step of selectively etching the surface using a residue containing the metal having a lower etching rate are included.
Public/Granted literature
- US20140312374A1 Method for Forming Projections and Depressions, Sealing Structure, and Light-Emitting Device Public/Granted day:2014-10-23
Information query
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