Invention Grant
US09396793B2 Phase change memory, writing method thereof and reading method thereof 有权
相变存储器,其写入方法及其读取方法

Phase change memory, writing method thereof and reading method thereof
Abstract:
A phase change memory (PCM), a writing method thereof and a reading method thereof are provided. The PCM has a plurality of memory cells. The writing method comprises the following steps. At least one stress pulse is applied for aging at least one of the memory cells. A starting pulse is applied to all of the memory cells of the PCM for decreasing a resistance of each memory cell. A detection pulse is applied to all of the memory cells of the PCM for detecting the resistance of each memory cell. A set pulse is applied to the aged memory cells. A reset pulse is applied to the non-aged memory cells.
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