发明授权
US09396934B2 Methods of forming films including germanium tin and structures and devices including the films
有权
形成包括锗锡的薄膜的方法和包括薄膜的结构和装置
- 专利标题： Methods of forming films including germanium tin and structures and devices including the films
- 专利标题（中）： 形成包括锗锡的薄膜的方法和包括薄膜的结构和装置
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申请号： US13966782申请日： 2013-08-14
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公开(公告)号： US09396934B2公开(公告)日： 2016-07-19
- 发明人: John Tolle
- 申请人： ASM IP Holding B.V.
- 申请人地址： NL Almere
- 专利权人： ASM IP Holding B.V.
- 当前专利权人： ASM IP Holding B.V.
- 当前专利权人地址： NL Almere
- 代理机构： Snell & Wilmer LLP
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/161 ; H01L29/165 ; C30B25/18 ; C30B29/52
摘要：
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.
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