Invention Grant
US09396934B2 Methods of forming films including germanium tin and structures and devices including the films
有权
形成包括锗锡的薄膜的方法和包括薄膜的结构和装置
- Patent Title: Methods of forming films including germanium tin and structures and devices including the films
- Patent Title (中): 形成包括锗锡的薄膜的方法和包括薄膜的结构和装置
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Application No.: US13966782Application Date: 2013-08-14
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Publication No.: US09396934B2Publication Date: 2016-07-19
- Inventor: John Tolle
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/161 ; H01L29/165 ; C30B25/18 ; C30B29/52
Abstract:
Methods of forming germanium-tin films using germane as a precursor are disclosed. Exemplary methods include growing films including germanium and tin in an epitaxial chemical vapor deposition reactor, wherein a ratio of a tin precursor to germane is less than 0.1. Also disclosed are structures and devices including germanium-tin films formed using the methods described herein.
Public/Granted literature
- US20150048485A1 METHODS OF FORMING FILMS INCLUDING GERMANIUM TIN AND STRUCTURES AND DEVICES INCLUDING THE FILMS Public/Granted day:2015-02-19
Information query
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