Test pattern for feature cross-sectioning

Invention Grant

US09397012B2 Test pattern for feature cross-sectioning 有权

Title translation: 特征横截面测试模式

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Patent Title: Test pattern for feature cross-sectioning
Patent Title (中): 特征横截面测试模式
Application No.: US14316915

Application Date: 2014-06-27
Publication No.: US09397012B2

Publication Date: 2016-07-19
Inventor: Deniz E. Civay , Ralph Schlief
Applicant: GLOBALFOUNDRIES Inc.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES Inc.
Current Assignee: GLOBALFOUNDRIES Inc.
Current Assignee Address: KY Grand Cayman
Agency: Amerson Law Firm, PLLC
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/66 ; H01L21/78 ; G01B11/00 ; G03F1/44

Test pattern for feature cross-sectioning

Abstract:

A method includes forming a first plurality of instances of a first pattern on a substrate. The first pattern includes a plurality of features defining a first spacing between features in a first direction. The instances in the first plurality are offset from one another at least in a second direction other than the first direction. The substrate is cleaved along a cleavage line. At least a first critical dimension of a feature in the first plurality of instances intersected by the cleavage line is measured.

Abstract(Chinese):

一种方法包括在衬底上形成第一图案的第一多个实例。第一图案包括限定第一方向上的特征之间的第一间隔的多个特征。第一多个中的实例至少在除了第一方向之外的第二方向上彼此偏移。底物沿切割线切割。测量由切割线相交的第一多个实例中的特征的至少第一临界尺寸。

Public/Granted literature

US20150380320A1 TEST PATTERN FOR FEATURE CROSS-SECTIONING Public/Granted day:2015-12-31

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）