Invention Grant
- Patent Title: Bi-directional ESD protection device
- Patent Title (中): 双向ESD保护装置
-
Application No.: US14578747Application Date: 2014-12-22
-
Publication No.: US09397085B2Publication Date: 2016-07-19
- Inventor: Akram A. Salman , Farzan Farbiz , Aravind C. Appaswamy , Ann Margaret Concannon
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L29/861 ; H01L21/8238 ; H01L21/8234 ; H01L27/02 ; H01L27/06 ; H01L29/66
Abstract:
An integrated circuit and method with a bidirectional ESD transistor. A base diffusion separates an emitter diffusion and a collector diffusion. Silicide is blocked from the base diffusion, the emitter-base junction, the collector-base junction, and from equal portions of the emitter diffusion and the collector diffusions.
Public/Granted literature
- US20150187752A1 BI-DIRECTIONAL ESD PROTECTION DEVICE Public/Granted day:2015-07-02
Information query
IPC分类:
