发明授权
- 专利标题: Gate-all-around fin device
- 专利标题(中): 门全方位装置
-
申请号: US14882809申请日: 2015-10-14
-
公开(公告)号: US09397163B2公开(公告)日: 2016-07-19
- 发明人: John B. Campi, Jr. , Robert J. Gauthier, Jr. , Rahul Mishra , Souvick Mitra , Mujahid Muhammad
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址: US NY Armonk
- 专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: US NY Armonk
- 代理机构: Roberts Mlotkowski Safran & Cole, P.C
- 代理商 Steven Meyers; Andrew M. Calderon
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L29/08
摘要:
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
公开/授权文献
- US20160141365A1 GATE-ALL-AROUND FIN DEVICE 公开/授权日:2016-05-19