发明授权
- 专利标题： Active regions with compatible dielectric layers
- 专利标题（中）： 具有兼容电介质层的有源区
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申请号： US15018408申请日： 2016-02-08
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公开(公告)号： US09397165B2公开(公告)日： 2016-07-19
- 发明人: Pushkar Ranade
- 申请人： Pushkar Ranade
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L29/165
- IPC分类号： H01L29/165
摘要：
A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure has a dielectric layer comprised of an oxide of a first semiconductor material, wherein a second (and compositionally different) semiconductor material is formed between the dielectric layer and the first semiconductor material. In another embodiment, a portion of the second semiconductor material is replaced with a third semiconductor material in order to impart uniaxial strain to the lattice structure of the second semiconductor material.
公开/授权文献
- US20160172459A1 ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS 公开/授权日：2016-06-16
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