Photodetector capable of detecting long wavelength radiation

Invention Grant

US09397249B2 Photodetector capable of detecting long wavelength radiation 有权

Title translation: 能够检测长波长辐射的光电探测器

Patent Title: Photodetector capable of detecting long wavelength radiation
Patent Title (中): 能够检测长波长辐射的光电探测器
Application No.: US14322695

Application Date: 2014-07-02
Publication No.: US09397249B2

Publication Date: 2016-07-19
Inventor: Doyeol Ahn
Applicant: UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION
Applicant Address: KR Seoul
Assignee: University of Seoul Industry Cooperation Foundation
Current Assignee: University of Seoul Industry Cooperation Foundation
Current Assignee Address: KR Seoul
Agency: Dorsey & Whitney LLP
Main IPC: H01L21/00
IPC: H01L21/00 ; H01L31/112 ; G02B6/122 ; G02B6/13 ; H01L31/0232 ; H01L31/18 ; B82Y20/00

Abstract:

Apparatuses capable of and techniques for detecting long wavelength radiation are provided.

Abstract(Chinese):

提供了能够检测长波长辐射的装置和技术。

Public/Granted literature

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备