Invention Grant
US09397266B2 Lateral semiconductor light emitting diodes having large area contacts
有权
具有大面积接触的侧面半导体发光二极管
- Patent Title: Lateral semiconductor light emitting diodes having large area contacts
- Patent Title (中): 具有大面积接触的侧面半导体发光二极管
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Application No.: US14159209Application Date: 2014-01-20
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Publication No.: US09397266B2Publication Date: 2016-07-19
- Inventor: Matthew Donofrio , James Ibbetson , Zhimin James Yao
- Applicant: CREE, INC.
- Applicant Address: US NC Durham
- Assignee: CREE, INC.
- Current Assignee: CREE, INC.
- Current Assignee Address: US NC Durham
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L33/40 ; H01L33/42 ; H01L33/48 ; H01L33/62 ; H01L33/22 ; H01L33/38 ; H01L33/46 ; H01L33/60
Abstract:
Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
Public/Granted literature
- US20140151735A1 LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS Public/Granted day:2014-06-05
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