Invention Grant
- Patent Title: Semiconductor process
- Patent Title (中): 半导体工艺
-
Application No.: US14288399Application Date: 2014-05-28
-
Publication No.: US09401280B2Publication Date: 2016-07-26
- Inventor: Duan Quan Liao , Wei Cheng , Yikun Chen , Ching Hwa Tey , Xiao Zhong Zhu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/115
Abstract:
A semiconductor process includes the following steps. A first gate is formed on a substrate, wherein the first gate includes a stacked gate on the substrate and a cap on the stacked gate. A spacer material is formed to conformally cover the first gate and the substrate. The spacer material is etched to form a spacer on a side of the first gate and a block on the other side of the first gate corresponding to the side. A material covers the substrate, the block, the first gate and the spacer, wherein the top surface of the material is a flat surface. The block, the spacer and the material are pulled down with the same pulling selectivity so that an assisting gate is formed from the block and a selective gate is formed from the spacer.
Public/Granted literature
- US20150348789A1 SEMICONDUCTOR PROCESS Public/Granted day:2015-12-03
Information query
IPC分类:
